ENTRY C0783 20010326 0000C078300000001
SUBENT C0783001 20010326 0000C078300100001
BIB 13 19 C078300100002
INSTITUTE (1CANMCM) C078300100003
REFERENCE (J,PR/C,33,1799,198606) C078300100004
AUTHOR (N.J.DAVIS,J.A.KUEHNER,A.J.TRUDEL,C.BAMBER) C078300100005
TITLE 0- state at low excitation energy in 26Al C078300100006
FACILITY (VDGT,1CANMCM) C078300100007
INC-SOURCE (LAMB). Beam polarization 0.66 - 0.76 (+-0.03). C078300100008
SAMPLE Silicon oxide target, enriched to 96% 28Si, on carbon C078300100009
backing. C078300100010
METHOD Polarization determined using quench-ratio method. C078300100011
DETECTOR (MAGSP,MWPC) Resistive-wire position-sensitive C078300100012
counter placed in focal plane of Enge split-pole C078300100013
magnetic spectrograph. C078300100014
CORRECTION Coorected for background. C078300100015
ERR-ANALYS (ERR-S) Statistical uncertainty given. C078300100016
Actual errors somewhat larger because of uncertainty C078300100017
in defining background subtracted beneath peak. C078300100018
STATUS Data taken from Table I in reference. C078300100019
(APRVD) Approved by J.A. Kuehner, 26 March 2001. C078300100020
HISTORY (20010214C) VM C078300100021
ENDBIB 19 0 C078300100022
NOCOMMON 0 0 C078300100023
ENDSUBENT 22 0 C078300199999
SUBENT C0783002 20010214 0000C078300200001
BIB 1 1 C078300200002
REACTION (14-SI-28(D,A)13-AL-26,20/PAR,POL/DA,,TAP) C078300200003
ENDBIB 1 0 C078300200004
COMMON 2 3 C078300200005
E-EXC ANG C078300200006
MEV ADEG C078300200007
4.48 4. C078300200008
ENDCOMMON 3 0 C078300200009
DATA 3 5 C078300200010
EN DATA ERR-S C078300200011
MEV NO-DIM NO-DIM C078300200012
8.0 -1.25 0.14 C078300200013
8.5 -1.27 0.09 C078300200014
9.0 -1.51 0.08 C078300200015
9.5 -1.35 0.09 C078300200016
12.0 -1.36 0.09 C078300200017
ENDDATA 7 0 C078300200018
ENDSUBENT 17 0 C078300299999
ENDENTRY 2 0 C078399999999