ENTRY D4155 20061110 D052D415500000001
SUBENT D4155001 20061110 D052D415500100001
BIB 13 100 D415500100002
TITLE Gamma ray production cross-sections of deuteron D415500100003
induced nuclear reactions for light element analysis D415500100004
AUTHOR (G.A.Sziki,A.Simon,Z.Szikszai,Zs.Kertesz,E.Dobos) D415500100005
INSTITUTE (3HUNDEB) D415500100006
REFERENCE (J,NIM/B,251,343,2006) D415500100007
FACILITY (VDG,3HUNDEB) D415500100008
SAMPLE Thin film samples were prepared onto Ta and Al D415500100009
substrate simultaneously. D415500100010
For the chemical and thickness analysis of the thin D415500100011
layers Rutherford backscattering spectrometry was D415500100012
applied using focused ion beams of a few tens of D415500100013
micrometer size. DIGE measurements were performed also D415500100014
on the samples with aluminium substrate at 1.8 MeV D415500100015
deuteron energy, approximately on the same areas as D415500100016
the RBS measurements. Comparing the measured gamma D415500100017
yields, the number density of a certain isotope on the D415500100018
tantalum substrate could be deduced from the RBS D415500100019
results for the same isotope on the aluminum foil. D415500100020
METHOD (SITA,GSPEC,TTM) D415500100021
The DIGE measurements were carried out on the right D415500100022
30 degree beamline of the 5 MV Van de Graaff D415500100023
electrostatic accelerator of ATOMKI. D415500100024
The experimental set-up was specially designed in orderD415500100025
to provide ideal circumstances for the measurements. D415500100026
Provision was made to minimize background gamma D415500100027
radiation. D415500100028
The sample was positioned in the middle of an D415500100029
electrically insulated chamber, which served as an D415500100030
ideal Faraday cup. The current dose was measured on D415500100031
the chamber by an ORTEC 439 digital current integrator.D415500100032
The measurement on each thin target was started at a D415500100033
beam energy of 2 MeV and continued downwards with D415500100034
energy steps of 50 keV until 0.6 MeV. In some cases, D415500100035
to see certain parts of the yield curves more detailed,D415500100036
measurements at further energy points were made. To D415500100037
check the stability of each target, control D415500100038
measurements were also made after completing a series D415500100039
of measurements in the 2-0.6 MeV range. The applied D415500100040
beam current was gradually increased from 2 nA to D415500100041
10 nA conforming to the decreasing cross-section valuesD415500100042
with decreasing deuteron energy. D415500100043
ANALYSIS The method that was applied for the accurate D415500100044
determination of gamma-ray production cross-section is D415500100045
based on the basic formula of yield calculus in thick D415500100046
and intermediate thick targets, utilizing thick target D415500100047
yields measured on compounds and also the measured D415500100048
thin target gamma-ray yield curves. D415500100049
DETECTOR (HPGE) The gamma radiation was detected by a HPGe D415500100050
detector, placed at an angle of 60 degree to the beam D415500100051
axis and at a distance of 10 cm from the target. D415500100052
Nominal relative efficiency: 40%, resolution: 2 keV D415500100053
at 1.33 MeV gamma-energy. Length and diameter of the D415500100054
Ge crystal: 61.5 mm and 59.5 mm. D415500100055
The absolute efficiency (the product of the intrinsic D415500100056
efficiency and the solid angle of the detector) was D415500100057
determined by a 152Eu radioactive source, placed at D415500100058
the target position. D415500100059
ERR-ANALYS (EN-ERR) From the excitation curve measurement on a D415500100060
thick target a beam energy spread of 1.5 keV was D415500100061
deduced and an energy shift of 2 keV from the earlier D415500100062
calibration was observed. These shifts cause generally D415500100063
less than 0.5% relative error in the measured cross- D415500100064
section values, and this error does not exceed 2% even D415500100065
at the steepest section of the curves, thus it is D415500100066
negligible in comparison to the other error values. D415500100067
(ERR-S) The statistical error of each presented value D415500100068
was calculated according to the well-known rule of D415500100069
error propagation. Namely, it was derived from the D415500100070
errors of the measured thin target yields and that of D415500100071
K which depends on the thin/thick target yields. D415500100072
The statistical uncertainty of net peak area values wasD415500100073
0.5-2% except some thin target spectra at low D415500100074
bombarding energy where it reached 6-8%. D415500100075
Accuracy of the cross-section data is affected through D415500100076
the following factors: D415500100077
* certified concentration of the analyzed element D415500100078
in the thick target <1.0%, D415500100079
* accumulated charge <0.3%, D415500100080
* absolute efficiency of the gamma-ray detection ~3%, D415500100081
* stopping power of the sample for the bombarding D415500100082
particle ~3%. D415500100083
The fact that the samples have finite thickness can D415500100084
introduce further error which have to be taken into D415500100085
consideration at the 11B(d,p)12B reaction. The D415500100086
contribution is less than 2% above 1.2 MeV but can D415500100087
reach 5-10% at low deuteron energies. D415500100088
From the above-mentioned data it follows that the D415500100089
overall accuracy of cross-section determination is D415500100090
less then 7% in the case of the 6Li(d,p)7Li, D415500100091
9Be(d,n)10B, D415500100092
16O(d,p)17O and D415500100093
19F(d,p)20F reactions D415500100094
and less than 9% at the 11B(d,p)12B reaction, except D415500100095
some low energy data of minor analytical importance. D415500100096
ADD-RES Fitting adequate functions to the measured values D415500100097
below 1 MeV, the yield curves were extrapolated to the D415500100098
0-0.6 MeV energy range and then converted into D415500100099
cross-sections. D415500100100
HISTORY (20061110C) KB D415500100101
STATUS (APRVD) G.A. Sziki 2007.01.19. D415500100102
ENDBIB 100 0 D415500100103
COMMON 2 3 D415500100104
ANG EN-ERR D415500100105
ADEG KEV D415500100106
60. 1.5 D415500100107
ENDCOMMON 3 0 D415500100108
ENDSUBENT 107 0 D415500199999
SUBENT D4155002 20061110 D052D415500200001
BIB 4 7 D415500200002
REACTION (3-LI-6(D,P)3-LI-7,PAR,DA,G) D415500200003
PART-DET (G) 478 keV D415500200004
SAMPLE LiF layer on Ta substrate made by vacuum evaporation. D415500200005
Thickness: 12+-1 microg/cm**2. D415500200006
Number of nuclei: 6,7Li (311+-15)E+15 atom/cm**2, D415500200007
19F (273+-12)E+15 atom/cm**2. D415500200008
STATUS (TABLE) Data were taken from Table 3 of the ref. D415500200009
ENDBIB 7 0 D415500200010
COMMON 1 3 D415500200011
E D415500200012
KEV D415500200013
478.0 D415500200014
ENDCOMMON 3 0 D415500200015
DATA 3 28 D415500200016
EN DATA ERR-S D415500200017
KEV MB/SR MB/SR D415500200018
2000. 143. 2. D415500200019
1950. 146. 2. D415500200020
1900. 139. 2. D415500200021
1850. 136. 2. D415500200022
1800. 134. 2. D415500200023
1775. 125. 2. D415500200024
1750. 125. 2. D415500200025
1725. 125. 2. D415500200026
1700. 124. 2. D415500200027
1675. 119. 2. D415500200028
1650. 113. 1. D415500200029
1600. 111. 1. D415500200030
1550. 104. 1. D415500200031
1500. 101. 1. D415500200032
1450. 93.9 1.3 D415500200033
1400. 87.8 1.3 D415500200034
1350. 85.7 1.2 D415500200035
1300. 81.3 1.2 D415500200036
1250. 79.2 1.1 D415500200037
1200. 75.6 1.1 D415500200038
1150. 69.4 1.0 D415500200039
1100. 58.7 0.9 D415500200040
1050. 54.0 0.8 D415500200041
1000. 39.9 0.7 D415500200042
950. 25.8 0.5 D415500200043
900. 15.7 0.5 D415500200044
850. 8.54 0.35 D415500200045
800. 4.87 0.33 D415500200046
ENDDATA 30 0 D415500200047
ENDSUBENT 46 0 D415500299999
SUBENT D4155003 20061110 D052D415500300001
BIB 4 6 D415500300002
REACTION (4-BE-9(D,N)5-B-10,PAR,DA,G) D415500300003
PART-DET (G) 718 keV D415500300004
SAMPLE Be layer on Ta substrate made by vacuum evaporation. D415500300005
Thickness: 40+-3 microg/cm**2. D415500300006
Number of nuclei: 9Be (2650+-175)E+15 atom/cm**2. D415500300007
STATUS (TABLE) Data were taken from Table 3 of the ref. D415500300008
ENDBIB 6 0 D415500300009
COMMON 1 3 D415500300010
E D415500300011
KEV D415500300012
718.0 D415500300013
ENDCOMMON 3 0 D415500300014
DATA 3 28 D415500300015
EN DATA ERR-S D415500300016
KEV MB/SR MB/SR D415500300017
2000. 17.4 0.3 D415500300018
1950. 17.5 0.3 D415500300019
1850. 17.7 0.3 D415500300020
1800. 17.6 0.3 D415500300021
1750. 17.8 0.3 D415500300022
1700. 18.0 0.3 D415500300023
1650. 18.2 0.3 D415500300024
1600. 17.4 0.3 D415500300025
1550. 17.6 0.3 D415500300026
1500. 17.7 0.3 D415500300027
1450. 17.5 0.2 D415500300028
1400. 16.6 0.2 D415500300029
1350. 16.2 0.2 D415500300030
1300. 16.2 0.2 D415500300031
1250. 16.0 0.2 D415500300032
1200. 16.1 0.2 D415500300033
1150. 15.2 0.2 D415500300034
1100. 14.9 0.2 D415500300035
1050. 14.6 0.2 D415500300036
1000. 14.3 0.2 D415500300037
950. 12.9 0.2 D415500300038
900. 12.3 0.2 D415500300039
850. 11.6 0.2 D415500300040
800. 10.9 0.2 D415500300041
750. 10.2 0.1 D415500300042
700. 9.23 0.13 D415500300043
650. 8.23 0.12 D415500300044
600. 6.99 0.10 D415500300045
ENDDATA 30 0 D415500300046
ENDSUBENT 45 0 D415500399999
SUBENT D4155004 20061110 D052D415500400001
BIB 4 8 D415500400002
REACTION (5-B-11(D,P)5-B-12,PAR,DA,G) D415500400003
PART-DET (G) 953 keV and 1674 keV D415500400004
SAMPLE LiBO2 layer on Ta substrate made by vacuum evaporation.D415500400005
Thickness: 68+-4 microg/cm**2. D415500400006
Number of nuclei: 6,7Li (816+-47)E+15 atom/cm**2, D415500400007
10,11B (816+-47)E+15 atom/cm**2, D415500400008
16O (1632+-93)E+15 atom/cm**2. D415500400009
STATUS (TABLE) Data were taken from Table 3 of the ref. D415500400010
ENDBIB 8 0 D415500400011
NOCOMMON 0 0 D415500400012
DATA 4 53 D415500400013
E EN DATA ERR-S D415500400014
KEV KEV MB/SR MB/SR D415500400015
953. 2000. 7.88 0.15 D415500400016
953. 1950. 7.81 0.13 D415500400017
953. 1900. 7.45 0.13 D415500400018
953. 1850. 7.31 0.13 D415500400019
953. 1800. 7.03 0.13 D415500400020
953. 1750. 6.72 0.12 D415500400021
953. 1700. 6.73 0.12 D415500400022
953. 1650. 6.62 0.11 D415500400023
953. 1600. 6.25 0.11 D415500400024
953. 1550. 6.22 0.11 D415500400025
953. 1500. 6.15 0.11 D415500400026
953. 1450. 6.07 0.12 D415500400027
953. 1400. 5.83 0.10 D415500400028
953. 1350. 5.64 0.11 D415500400029
953. 1300. 5.25 0.09 D415500400030
953. 1250. 5.07 0.10 D415500400031
953. 1200. 4.70 0.10 D415500400032
953. 1150. 4.37 0.09 D415500400033
953. 1100. 4.01 0.09 D415500400034
953. 1050. 3.74 0.08 D415500400035
953. 1000. 3.39 0.07 D415500400036
953. 950. 3.03 0.07 D415500400037
953. 900. 2.56 0.06 D415500400038
953. 850. 2.08 0.05 D415500400039
953. 800. 1.78 0.04 D415500400040
953. 750. 1.52 0.04 D415500400041
953. 700. 1.19 0.03 D415500400042
953. 650. 0.94 0.03 D415500400043
953. 600. 0.67 0.02 D415500400044
1674. 2000. 12.6 0.2 D415500400045
1674. 1950. 12.3 0.2 D415500400046
1674. 1900. 11.8 0.2 D415500400047
1674. 1850. 11.9 0.2 D415500400048
1674. 1800. 11.5 0.2 D415500400049
1674. 1750. 10.9 0.2 D415500400050
1674. 1700. 10.7 0.2 D415500400051
1674. 1650. 10.2 0.2 D415500400052
1674. 1600. 9.68 0.16 D415500400053
1674. 1550. 9.52 0.16 D415500400054
1674. 1500. 8.79 0.15 D415500400055
1674. 1450. 8.21 0.15 D415500400056
1674. 1400. 6.98 0.13 D415500400057
1674. 1350. 6.45 0.13 D415500400058
1674. 1300. 5.92 0.11 D415500400059
1674. 1250. 4.88 0.11 D415500400060
1674. 1200. 4.18 0.10 D415500400061
1674. 1150. 3.38 0.09 D415500400062
1674. 1100. 2.39 0.08 D415500400063
1674. 1050. 1.71 0.07 D415500400064
1674. 1000. 1.27 0.06 D415500400065
1674. 950. 0.53 0.05 D415500400066
1674. 900. 0.29 0.02 D415500400067
1674. 850. 0.12 0.01 D415500400068
ENDDATA 55 0 D415500400069
ENDSUBENT 68 0 D415500499999
SUBENT D4155005 20061110 D052D415500500001
BIB 4 10 D415500500002
REACTION (8-O-16(D,P)8-O-17,PAR,DA,G) D415500500003
PART-DET (G) 871 keV D415500500004
SAMPLE Titanium-oxide layer was deposited onto Ta substrate D415500500005
by DC reactive magnetron sputtering from pure (99.999%)D415500500006
Ti target. During the deposition the oxygen was added D415500500007
to the argon plasma. D415500500008
Thickness: 27+-1 microg/cm**2. D415500500009
Number of nuclei: 16O (107+-5)E+15 atom/cm**2, D415500500010
46,47,48,49,50Ti (307+-14)E+15 atom/cm**2. D415500500011
STATUS (TABLE) Data were taken from Table 3 of the ref. D415500500012
ENDBIB 10 0 D415500500013
COMMON 1 3 D415500500014
E D415500500015
KEV D415500500016
871.0 D415500500017
ENDCOMMON 3 0 D415500500018
DATA 3 43 D415500500019
EN DATA ERR-S D415500500020
KEV MB/SR MB/SR D415500500021
2000. 32.3 0.5 D415500500022
1950. 28.8 0.5 D415500500023
1900. 23.6 0.5 D415500500024
1850. 20.7 0.4 D415500500025
1800. 19.2 0.4 D415500500026
1750. 19.7 0.4 D415500500027
1700. 20.1 0.4 D415500500028
1650. 19.1 0.4 D415500500029
1600. 17.1 0.3 D415500500030
1550. 15.7 0.3 D415500500031
1500. 14.6 0.3 D415500500032
1450. 15.6 0.3 D415500500033
1400. 15.2 0.3 D415500500034
1350. 13.5 0.3 D415500500035
1325. 12.4 0.2 D415500500036
1315. 12.3 0.2 D415500500037
1305. 14.1 0.3 D415500500038
1295. 11.9 0.2 D415500500039
1285. 10.4 0.2 D415500500040
1275. 9.72 0.17 D415500500041
1250. 8.25 0.17 D415500500042
1200. 6.49 0.14 D415500500043
1150. 6.17 0.14 D415500500044
1100. 5.62 0.12 D415500500045
1050. 7.06 0.14 D415500500046
1025. 8.41 0.15 D415500500047
1010. 9.86 0.16 D415500500048
1000. 10.5 0.2 D415500500049
990. 10.6 0.2 D415500500050
980. 10.9 0.2 D415500500051
970. 11.3 0.2 D415500500052
960. 10.2 0.2 D415500500053
950. 8.57 0.14 D415500500054
940. 7.12 0.13 D415500500055
930. 6.55 0.14 D415500500056
920. 5.67 0.13 D415500500057
900. 5.33 0.12 D415500500058
850. 3.93 0.09 D415500500059
800. 3.60 0.08 D415500500060
750. 2.73 0.08 D415500500061
700. 1.68 0.05 D415500500062
650. 1.23 0.04 D415500500063
600. 0.93 0.04 D415500500064
ENDDATA 45 0 D415500500065
ENDSUBENT 64 0 D415500599999
SUBENT D4155006 20061110 D052D415500600001
BIB 4 7 D415500600002
REACTION (9-F-19(D,P)9-F-20,PAR,DA,G) D415500600003
PART-DET (G) 656 keV D415500600004
SAMPLE LiF layer on Ta substrate made by vacuum evaporation. D415500600005
Thickness: 12+-1 microg/cm**2. D415500600006
Number of nuclei: 6,7Li (311+-15)E+15 atom/cm**2, D415500600007
19F (273+-12)E+15 atom/cm**2. D415500600008
STATUS (TABLE) Data were taken from Table 3 of the ref. D415500600009
ENDBIB 7 0 D415500600010
COMMON 1 3 D415500600011
E D415500600012
KEV D415500600013
656.0 D415500600014
ENDCOMMON 3 0 D415500600015
DATA 3 29 D415500600016
EN DATA ERR-S D415500600017
KEV MB/SR MB/SR D415500600018
2000. 5.82 0.12 D415500600019
1950. 5.32 0.10 D415500600020
1900. 5.06 0.10 D415500600021
1850. 4.59 0.09 D415500600022
1800. 4.31 0.08 D415500600023
1775. 4.05 0.08 D415500600024
1750. 3.95 0.08 D415500600025
1725. 4.00 0.08 D415500600026
1700. 3.63 0.07 D415500600027
1675. 3.48 0.07 D415500600028
1650. 3.37 0.06 D415500600029
1600. 3.16 0.07 D415500600030
1550. 3.12 0.06 D415500600031
1500. 3.01 0.06 D415500600032
1450. 2.54 0.06 D415500600033
1400. 2.34 0.06 D415500600034
1350. 2.03 0.05 D415500600035
1300. 1.89 0.05 D415500600036
1250. 1.76 0.05 D415500600037
1200. 1.55 0.04 D415500600038
1150. 1.14 0.04 D415500600039
1100. 0.84 0.04 D415500600040
1050. 0.73 0.03 D415500600041
1000. 0.58 0.03 D415500600042
950. 0.44 0.03 D415500600043
900. 0.36 0.03 D415500600044
850. 0.29 0.02 D415500600045
800. 0.16 0.01 D415500600046
750. 0.062 0.005 D415500600047
ENDDATA 31 0 D415500600048
ENDSUBENT 47 0 D415500699999
ENDENTRY 6 0 D415599999999